VDS 1200 V C3M0032120D ID @ 25˚C 63 A .
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C3M0032120D - Silicon Carbide Power MOSFET
C3M0032120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High bl.
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Wuxi Gwok Semiconductor Co.,Ltd GC3M0032120D Silicon Carbide Power MOSFET NN-CChhannel El Enhhaanncceemmeennt tMMooddee Features • VDS 12.
