C3M0032120J1 Datasheet | Specifications & PDF Download

C3M0032120J1 Silicon Carbide Power C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain Features (TAB) • 3rd generation Silicon

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VDS 1200 V C3M0032120J1 ID @ 25˚C 68 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode

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