C3M0040120K Datasheet | Specifications & PDF Download

C3M0040120K 1200V 40mohm Silicon Carbide Power MOSFET N-Channel Enhancement Mode Tab Drain Features Drain (Pin 1, TAB) • 3rd generation SiC MOSF

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C3M0040120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO

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VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode

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