C3M0040120K
Key Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin Tab
- 8mm of creepage distance between drain and source Drain
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances *
- Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
