C3M0065090J Datasheet | Specifications & PDF Download

C3M0065090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain Features (TAB) • New C3M Silicon Car

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C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Fe

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