C3M0065090J Silicon Carbide Power MOSFET C3MTM MO.
C3M0065090J - Silicon Carbide Power MOSFET
C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Fe.C3M0065090J - Silicon Carbide Power MOSFET
C3M0065090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain Features (TAB) • New C3M Silicon Car.