C3M0065100J Datasheet | Specifications & PDF Download

C3M0065100J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features TAB Drain Drain (TAB) • C3MTM SiC MOSFET t

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VDS 1000 V C3M0065100J ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode

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