C3M0075120J Datasheet | Specifications & PDF Download

VDS 1200 V C3M0075120J ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 75 mΩ N-Channel Enhancement Mode

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C3M0075120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Low impe

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C3M0075120J2 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • Optimized

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