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C3M0075120J - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • Low impedance package with driver source pin.
  • 7mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.

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Datasheet Details

Part number C3M0075120J
Manufacturer CREE
File Size 0.99 MB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet C3M0075120J Datasheet
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VDS 1200 V C3M0075120J ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 75 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • Low impedance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications TAB Drain 1 2 34 5 6 7 G KS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4
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