C3M0120090J Datasheet | Specifications & PDF Download

C3M0120090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • New C3M SiC MOSFET technology • Hig

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C3M0120090J VDS ID @ 25˚C 900 V 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode F

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