C3M0120100J Datasheet | Specifications & PDF Download

C3M0120100J Silicon Carbide Power MOSFET

VDS 1000 V C3M0120100J ID @ 25˚C 22 A .

C3M0120100J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain (TAB) Features • C3MTM SiC MOSFET techno

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VDS 1000 V C3M0120100J ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode

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