C3M0350120J Datasheet | Specifications & PDF Download

C3M0350120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • 3rd generation Silicon Carbide (Si

(15 views)

VDS 1200 V C3M0350120J ID @ 25˚C 7.2 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 350 mΩ N-Channel Enhancement Mode

(13 views)