C3M0350120J Datasheet | Specifications & PDF Download

C3M0350120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • 3rd generation Silicon Carbide (Si

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VDS 1200 V C3M0350120J ID @ 25˚C 7.2 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 350 mΩ N-Channel Enhancement Mode

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