C4559 Datasheet | Specifications & PDF Download

RC4559 DUAL HIGHĆPERFORMANCE OPERATIONAL AMPLIFIER • Matched Gain and Offset Between Amplifiers • Unity-Gain Bandwidth . . . 3 MHz Min • Slew Rate .

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www.DataSheet4U.com www.DataSheet4U.com w w w .d e e h s a t a . u t4 m o c NJM4558/4559 MEMO [CAUTION] The specifications on this databook a

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Power Transistors 2SC4559 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching

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www.fairchildsemi.com RC4559 Dual High-Gain Operational Amplifier Features • Unity gain bandwidth – 4.0 MHz • Slew rate – 2.0 V/mS • Low noise voltage

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Power Transistors 2SC4559 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching

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Alfa-MOS Technology General Description AFC4559BW, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), l

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Alfa-MOS Technology General Description AFC4559W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High speed switc

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www.DataSheet4U.com ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A P-Channel V(B

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4559 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·High Spe

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Alfa-MOS Technology General Description AFC4559B, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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