C4D20120H Datasheet | Specifications & PDF Download

C4D20120H 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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Wuxi Gwok Semiconductor Co.,Ltd GC4D20120H Silicon Carbide Schottky Diode Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High

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C4D20120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency

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