C5122 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 40

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Features • 80C51 Core : – 6 Clocks per Instruction – Speed up to 16 MHz • 768 Bytes RAM • AT83C5122: 32 Kbytes ROM • AT83C5123: 30 Kbytes ROM • AT85C5

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 40

(8 views)

Features • 80C51 Core : • • • • • • • – 6 Clocks per Instruction – Speed up to 16 MHz 768 Bytes RAM AT83C5122: 32 Kbytes ROM AT83C5123: 30 Kbytes ROM

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Addendum to Datasheet This document is an addendum for the Smart Card Interface block concerning the “Initialization Procedure” section of the AT8xC51

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Addendum to Datasheet This document is an addendum for the Smart Card Interface block concerning the “Initialization Procedure” section of the AT8xC51

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Features • 80C51 Core : • • • • • • • – 6 Clocks per Instruction – Speed up to 16 MHz 768 Bytes RAM AT83C5122: 32 Kbytes ROM AT83C5123: 30 Kbytes ROM

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Features • 80C51 Core : • • • • • • • – 6 Clocks per Instruction – Speed up to 16 MHz 768 Bytes RAM AT83C5122: 32 Kbytes ROM AT83C5123: 30 Kbytes ROM

(5 views)

Features • 80C51 Core : • • • • • • • – 6 Clocks per Instruction – Speed up to 16 MHz 768 Bytes RAM AT83C5122: 32 Kbytes ROM AT83C5123: 30 Kbytes ROM

(5 views)

Features • 80C51 Core : • • • • • • • – 6 Clocks per Instruction – Speed up to 16 MHz 768 Bytes RAM AT83C5122: 32 Kbytes ROM AT83C5123: 30 Kbytes ROM

(4 views)

Addendum to Datasheet This document is an addendum for the Smart Card Interface block concerning the “Initialization Procedure” section of the AT8xC51

(4 views)