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C5825 Datasheet | Specifications & PDF Download

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C5825 Power transistor

Power transistor (60V, 3A) 2SC5825 zFeatures 1) H.

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TC582562AXB - CMOS NAND EPROM

TC582562AXB TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT (32M × 8 BITS) CMOS NAND E PROM DESCRIPTION The TC582562A i
Rating: 1 (4 votes)
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C5825 - Power transistor

Power transistor (60V, 3A) 2SC5825 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200m
Rating: 1 (4 votes)
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TC58256AFTI - CMOS NAND EPROM

TC58256AFTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT (32M × 8 BITS) CMOS NAND E PROM DESCRIPTION The TC58256A is
Rating: 1 (3 votes)
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2SC5825 - NPN TRANSISTOR

Power transistor (60V, 3A) 2SC5825 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200m
Rating: 1 (2 votes)

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