C8204-2 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC8204/D MOC8204* GlobalOptoisolator™ [CTR = 20% Min] 6-Pin DIP Optoisolators High V

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GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The MOC8204 device consists of a gallium arsenide infrared emitting diode optically cou

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H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers September 2007 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltag

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NEC's VARIABLE UPC8204TK GAIN AMPLIFIER FEATURES • OPERATING FREQUENCY: f = 0.8 GHz to 2.5 GHz • MAXIMUM POWER GAIN: GPMAX = 14.5 dB TYP at f = 1.9 GH

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6-Pin DIP High Voltage Phototransistor Optocouplers 4N38M, H11D1M, H11D3M, MOC8204M Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransi

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TPC8204-VB TPC8204-VB Datasheet Dual N-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.019 at VGS = 4.5 V 0.0

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1. CSC8204CP CSC8204CP DIP8 2. 2. 1 DIP8 1 2 2. 2 1 2 3 4 5 VCC TR CSF RSF 34 67 5 GND 6 RTF 7 CTF 8 OUT 8 14 0510 5807123-5542 15 0510 58

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FETek Technology Corp.  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technolo

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