Schottky Barrier Diode Silicon Epitaxial CBS05F30 .
Advanced Semiconductor
CBSL1 - NPN SILICON RF POWER TRANSISTOR
CBSL1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipmen.
Advanced Semiconductor
CBSL30 - NPN SILICON RF POWER TRANSISTOR
CBSL30 DESCRIPTION: NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R C B 2XØ.130 .115 .430 D E .125 G H I J K L F The.
Vishay
RN70E10R0CBSL143 - Metal Film Resistors
CMF (Military RN and RL) www.vishay.com Vishay Dale Metal Film Resistors, Military, MIL-R-10509 Qualified, Precision, Type RN and MIL-PRF-22684 Qual.
UTC
6N60-CBS - N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 6N60-CBS Preliminary 6.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60-CBS is a high voltage power MOSF.
UTC
2N60-CBS - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60-CBS 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CBS is a high voltage power MOSFET and is designe.
Advanced Semiconductor
CBSL100 - NPN SILICON RF POWER TRANSISTOR
CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) .080x45° A B FULL R (4X).060 R E.
Advanced Semiconductor
CBSL15 - NPN SILICON RF POWER TRANSISTOR
CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL15 is Designed for .040x45° C B 2XØ.130 PACKAGE STYLE .230 6L FLG A 4X .025 R .115 ..
Advanced Semiconductor
CBSL150 - NPN SILICON RF POWER TRANSISTOR
CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYL.
Advanced Semiconductor
CBSL30B - NPN SILICON RF POWER TRANSISTOR
CBSL30B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL30B is Designed for PACKAGE STYLE .250 BAL FLG .020 x 45° B A Ø.130 NOM. .050 x 45°.
Advanced Semiconductor
CBSL6 - NPN SILICON RF POWER TRANSISTOR
CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G.
Advanced Semiconductor
CBSL60B - NPN SILICON RF POWER TRANSISTOR
CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL60B is Designed for PACKAGE STYLE .450 BAL FLG (A) .060x45° B A FULL R .100x45° C D.
Toshiba
CBS10S30 - Schottky Barrier Diode
Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathod.
