CBS Datasheet | Specifications & PDF Download

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Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathod

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UNISONIC TECHNOLOGIES CO., LTD 6N60-CBS Preliminary 6.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-CBS is a high voltage power MOSF

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FCBS0550 Smart Power Module (SPM) September 8, 2005 FCBS0550 Smart Power Module (SPM) Features • UL Certified No.E209204(SPM27-BA package) • 500V-5

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SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Repetive Peak Reverse Voltage : V

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SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=35A. Repetive Peak Reverse Voltage : V

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VISIBLE DETECTOR CdS photoconductive cell Metal package type Hermetically sealed for high reliability CdS photoconductive cells utilize photoconduc

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UNISONIC TECHNOLOGIES CO., LTD 2N60-CBS 2.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-CBS is a high voltage power MOSFET and is designe

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MITSUBISHI MITSUBISHI MODULES> PM200CBS060 PM200CBS060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULAT

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CBSL1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipmen

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CBSL30 DESCRIPTION: NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R C B 2XØ.130 .115 .430 D E .125 G H I J K L F The

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CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL60B is Designed for PACKAGE STYLE .450 BAL FLG (A) .060x45° B A FULL R .100x45° C D

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CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G

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PM150CBS060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Intellimod™ Module MAXISS Series™ Multi AXIS Servo IP

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