CEG8205 Dual N-Channel Enhancement Mode Field Effe.
CEG8205 - Dual N-Channel Enhancement Mode Field Effect Transistor
CEG8205 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super High.CEG8205A - Dual N-Channel Enhancement Mode Field Effect Transistor
CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V..CEG8205 - Dual N-Channel MOSFET
CEG8205-VB CEG8205-VB Datasheet Dual N-Channel 25-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 25 0.032.