CEP6060 Datasheet | Specifications & PDF Download

CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e

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http://www.ncepower.com NCEP6060GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6060GU uses Super Trench technology that is General

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CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON

Rating: 1 ★ (2 votes)

Rating: 1 ★ (1 votes)