CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT Desc.
CREE
CG2H40010 - RF Power GaN HEMT
CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG.
MACOM
CG2H40010 - RF Power GaN HEMT
CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT Description The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT.
