CG2H40010 Datasheet | Specifications & PDF Download

CG2H40010 RF Power GaN HEMT

CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT Desc.

CG2H40010 - RF Power GaN HEMT

CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT Description The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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CREE

CG2H40010 - RF Power GaN HEMT

CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG

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