CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Descr.
CREE
CG2H40045 - RF Power GaN HEMT
CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2.
MACOM
CG2H40045 - RF Power GaN HEMT
CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Description The CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
