CGH40006S (Cree)
RF Power GaN HEMT
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400
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CGH40006S 6 W, RF Power GaN HEMT, Plastic Descript.
RF Power GaN HEMT
RF Power GaN HEMT
RF Power GaN HEMT
CGH40006S Distributor
