
CGH40035F - RF Power GaN HEMT
CGH40035F
35 W, RF Power GaN HEMT
Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, ope
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CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT Desc.
CGH40035F Distributor