CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT Desc.
MACOM
CGH40035F - RF Power GaN HEMT
CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT Description The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT.
CREE
CGH40035F - RF Power GaN HEMT
CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, ope.
