CH-130-4 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High

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ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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LTK5130 2Ω11W 、7.5V_F、   LTK5130 2Ω-11W、 F 。LTK5130 ， 7.5V, LTK5130 IO ，、、AB 、D ， IO ， AB/D 。AB D FM  2.5V-7.5V   D /AB 、 EMI

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High

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ST13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operat

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FJP13009 — High-Voltage Fast-Switching NPN Power Transistor September 2014 FJP13009 High-Voltage Fast-Switching NPN Power Transistor Features • Hig

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FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High

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ST13007 High voltage fast-switching NPN power transistor Features ■ DC current gain classification ■ High voltage capability ■ Low spread of dynamic

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 4.0SMDJ Series 4000W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 4000W @10

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2SK1305 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4

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SPECIFICATION No. STK403-130 1. Case Outline 15Pins (See attached Package Outline Diagram) 2. Function 3. Application 2 channels AF power amplifier 1

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ST13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operat

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IRF9130 Data Sheet February 1999 File Number 2220.3 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate p

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SM120B thru SM1200B 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.096 (2.44) 0.084 (2.13) 0.012 (0.305) 0.006 (

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