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2N7002D - 60V N-Channel MOSFET
Chip Integration Technology Corporation 2N7002D 60V N-Channel MOSFET N-Channel MOSFET – ESD Protected Features: ● Simple Drive Requirement ● Small .MSL4435A - P-Channel Enhancement Mode MOSFET
MSL4435A Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET Features: □ Advanced high cell density Trench technology □ E.CI15T60 - 15A 600V Field Stop Trench IGBT
CI15T60 15A600V Field Stop Trench IGBT ■ Features • Positive temperature Co-efficient for easy parallel operation. • Short collector time-5us. • High.ESDA3L08 - 350W Surface Mount Transient Voltage Suppressor Array
Low Capacitance SMD TVS Array Chip Integration Technology Corporation ESDA3L03 SERIES 350W Surface Mount Transient Voltage Suppressor Array VOLTAGE .FR208 - 2A Leaded Type Fast Rectifiers
FR2005 THRU FR210 2A Leaded Type Fast Rectifiers ■ Features • Axial lead type devices for through hole design. • High current capability. • Fast swit.CSRS545-A - Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation CSRS545-A Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) VRRM TJ V(Typ).MHF10N60CT - Silicon N-Channel Power MOSFET
MHF10N60CT 600V Silicon N-Channel Power MOSFET ■ Features • Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capa.MBR20100CT-T - Trench Schottky Rectifier
Chip Integration Technology Corporation MBR20100CT-T 20A Trench Schottky Rectifier Main Product Characteristics IF(AV) VRRM TJ V(Typ) 2X10A 100V 1.MBRB1045CT - 10A Surface Mount High Power Schottky Barrier Rectifiers
MBRB1040CT THRU MBRB10200CT 10A Surface Mount High Power Schottky Barrier Rectifiers ■ Features • Electrostatic discharge (ESD) test under IEC6100-4-.MMBT2222A - NPN Transistor
MMBT2222A 600mA General Purpose NPN Epitaxial Planar Transistor ■ Features • High collector-emitterbreakdien voltage. (BVCEO = 40V@IC=10mA). • Small .MBR20100 - 20A High Power Schottky Barrier Rectifiers
MBR2040 THRU MBR20200 20A High Power Schottky Barrier Rectifiers ■ Features ■ Outline • Electrostatic discharge (ESD) test under IEC6100-4-2 standa.CSP10S200S-A - Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation CSP10S200S-A Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) VRRM TJ V(T.MBR20100CT - 20A High Power Schottky Barrier Rectifiers
MBR2040CT THRU MBR20200CT 20A High Power Schottky Barrier Rectifiers ■ Features ■ Outline • Low power loss, high efficiency. • High current capabil.AB10S - Single Phase 0.5AMP Surface Mount Glass Passivated Bridge Rectifiers
AB2S SERIES Single Phase 0.5AMP Surface Mount Glass Passivated Bridge Rectifiers Main Product Characteristics IF(AV) VRRM TJ VF(Typ) 0.5A 200~1000V.CP5S100S - Trench Schottky Rectifier
CP5S100S 5A Surface Mount Trench Schottky Rectifier ■ Features • Low forward voltage drop. • Excellent high temperature stability. • Fast switching c.SIC12C60 - 12A SiC Schottky Diode
SIC12C60 12A SiC Schottky Diode ■ Features • Low Conduction and Switching Loss • Positive Temperature Coefficient on Vf • Temperature Independent Swi.MBRF20100CT - 20A High Power Schottky Barrier Rectifiers
MBRF2040CT THRU MBRF20200CT 20A High Power Schottky Barrier Rectifiers ■ Features ■ Outline • Low power loss, high efficiency. • High current capab.FR608 - 6A Leaded Type Fast Rectifiers
FR6005 THRU FR610 6A Leaded Type Fast Rectifiers ■ Features • Axial lead type devices for through hole design. • High current capability. • Fast swit.2SB1188 - 2A General Purpose PNP Transistor
2SB1188 2A General Purpose PNP Epitaxial Planar Transistor ■ Features • Low VCE(sat) VCE(sat) = -0.5V(Typ.) (IC/IB=-2A/-0.2A). • Complements 2SD1766..MMBT3904W - 200mA General Purpose NPN Epitaxial Planar Transistor
MMBT3904W 200mA General Purpose NPN Epitaxial Planar Transistor ■ Features • High collector-emitterbreakdien voltage. (BVCEO = 40V@IC=1mA). • Small l.