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MSL4435A - P-Channel Enhancement Mode MOSFET

General Description

The MSL4435A is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The MSL4435A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Key Features

  • Advanced high cell density Trench technology.
  • Excellent CdV/dt effect decline.
  • Green Device Available 「 Super Low Gate Charge 「 100% EAS Guaranteed.

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Datasheet Details

Part number MSL4435A
Manufacturer CITC
File Size 399.39 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MSL4435A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSL4435A Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET Features: □ Advanced high cell density Trench technology □ Excellent CdV/dt effect decline □ Green Device Available 「 Super Low Gate Charge 「 100% EAS Guaranteed Description: The MSL4435A is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The MSL4435A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -30V 20mΩ -7.5A REF.