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MSL120N06G - N-Channel Enhancement Mode MOSFET

General Description

DDDD SOP -8 (5,6,7,8) DD DD (4) G SSSG Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note:1) Gate-Source Voltage TA = 25OC TA = 70OC TA = 25OC Diode Continuous Forward Current Av

Key Features

  • s.
  • 60V/12A RDS(ON) = 12mΩ (max. ) @ VGS= 10V RDS(ON) = 14.5mΩ (max. ) @ VGS= 4.5V.
  • Reliable and Rugged.
  • Lead free and green device available (RoHS compliant).

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Datasheet Details

Part number MSL120N06G
Manufacturer CITC
File Size 710.06 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MSL120N06G Datasheet

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■ Features • 60V/12A RDS(ON) = 12mΩ (max.) @ VGS= 10V RDS(ON) = 14.5mΩ (max.) @ VGS= 4.5V • Reliable and Rugged. • Lead free and green device available (RoHS compliant). ■ Application • Secondary side synchronous rectification. • DC-DC converter. • Motor control. • Load Switching. MSL120N06G N-Channel Enhancement Mode MOSFET ■ Pin Description DDDD SOP -8 (5,6,7,8) DD DD (4) G SSSG ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note:1) Gate-Source Voltage TA = 25OC TA = 70OC TA = 25OC Diode Continuous Forward Current Avalanche Current, single pulse (note:2) TA = 25OC L=0.5mH Avalanche Energy, single pulse (note:2) L=0.