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MSL120N10G - N-Channel Enhancement Mode MOSFET

General Description

2 2 2 2 3 3 1 3 Preliminary Absolute Maximum Ratings (TJ = 25OC unless otherwise specified) PARAMETER CONDITIONS Continuous Drain Current (silicon limited) TC = 25OC TC = 100OC Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, single pulse Power

Key Features

  • r>.
  • High speed power switching, logic level.
  • Enhanced body diode dv/dt capability.
  • Enhanced avalanche ruggedness.
  • 100% UIS tested, 100% Rg tested.
  • Lead free, halogen free.

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Datasheet Details

Part number MSL120N10G
Manufacturer CITC
File Size 1.54 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MSL120N10G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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■ Main Product Characteristics VDS RDS(on),typ RDS(on),typ ID VGS=10V VGS=4.5V 100V 9.5mΩ 11.