Datasheet Details
| Part number | MSL120N10G |
|---|---|
| Manufacturer | CITC |
| File Size | 1.54 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | MSL120N10G-CITC.pdf |
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Overview: ■ Main Product Characteristics VDS RDS(on),typ RDS(on),typ ID VGS=10V VGS=4.5V 100V 9.5mΩ 11.
| Part number | MSL120N10G |
|---|---|
| Manufacturer | CITC |
| File Size | 1.54 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | MSL120N10G-CITC.pdf |
|
|
|
2 2 2 2 3 3 1 3 Preliminary ■ Absolute Maximum Ratings (TJ = 25OC unless otherwise specified) PARAMETER CONDITIONS Continuous Drain Current (silicon limited) TC = 25OC TC = 100OC Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, single pulse Power dissipation Operating and Storage Temperature Range L=0.1mH, TC = 25OC TC = 25OC ■ Absolute Maximum Ratings PARAMETER Thermal resistance junction-lead Thermal Resistance-Junction to Ambient
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