Description
DDDD
Top View of SOP-8
( 5,6,7,8 ) D D DD
SSSG
(4) G
SSS (1, 2, 3)
P- Channel MOSFET
Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
PARAMETER
CONDITIONS
Drain-Source Voltage
Pulsed Drain Current(Note:1) Gate-Source Voltage
VGS =-10V
Diode Continuous Forward Current(
Features
- s.
- -30V/-23.8A RDS(ON) = 4.9mΩ (max. ) @ VGS= -10V RDS(ON) = 8.2mΩ (max. ) @ VGS= -4.5V.
- Super high dense cell design.
- Reliable and Rugged.
- Lead free and green device available
(RoHS compliant).
- HBM ESD protection level pass 8KV. Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
MSL049P03G Datasheet
