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MSL049P03G - P-Channel Enhancement Mode MOSFET

General Description

DDDD Top View of SOP-8 ( 5,6,7,8 ) D D DD SSSG (4) G SSS (1, 2, 3) P- Channel MOSFET Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Pulsed Drain Current(Note:1) Gate-Source Voltage VGS =-10V Diode Continuous Forward Current(

Key Features

  • s.
  • -30V/-23.8A RDS(ON) = 4.9mΩ (max. ) @ VGS= -10V RDS(ON) = 8.2mΩ (max. ) @ VGS= -4.5V.
  • Super high dense cell design.
  • Reliable and Rugged.
  • Lead free and green device available (RoHS compliant).
  • HBM ESD protection level pass 8KV. Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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Datasheet Details

Part number MSL049P03G
Manufacturer CITC
File Size 711.77 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MSL049P03G Datasheet

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MSL049P03G P-Channel Enhancement Mode MOSFET ■ Features • -30V/-23.8A RDS(ON) = 4.9mΩ (max.) @ VGS= -10V RDS(ON) = 8.2mΩ (max.) @ VGS= -4.5V • Super high dense cell design • Reliable and Rugged. • Lead free and green device available (RoHS compliant). • HBM ESD protection level pass 8KV. Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ■ Application • Power management in notebook computer portable equipment and battery powered system.