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MSL049P03G

Manufacturer: Chip Integration Technology

MSL049P03G datasheet by Chip Integration Technology.

MSL049P03G datasheet preview

MSL049P03G Datasheet Details

Part number MSL049P03G
Datasheet MSL049P03G-CITC.pdf
File Size 711.77 KB
Manufacturer Chip Integration Technology
Description P-Channel Enhancement Mode MOSFET
MSL049P03G page 2 MSL049P03G page 3

MSL049P03G Overview

DDDD Top View of SOP-8 ( 5,6,7,8 ) D D DD SSSG (4) G SSS (1, 2, 3) P- Channel MOSFET Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Pulsed Drain Current(Note:1) Gate-Source Voltage VGS =-10V Diode Continuous Forward.

MSL049P03G Key Features

  • 30V/-23.8A RDS(ON) = 4.9mΩ (max.) @ VGS= -10V RDS(ON) = 8.2mΩ (max.) @ VGS= -4.5V
  • Super high dense cell design
  • Reliable and Rugged
  • Lead free and green device available
  • HBM ESD protection level pass 8KV
  • Application
  • Power management in notebook puter portable equipment and battery powered system
  • Pin Description DDDD
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