CJ2101-G Datasheet | Specifications & PDF Download

CJ2101 SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel MOSFET FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life SOT-323

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MOSFET CJ2101-G RoHS Device V(BR)DSS -20V RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V ID -1.4A Features - P-Channel MOSFET - Leading tren

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel 8-V(D-S) MOSFET FEATURE Leading Trench Techno

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