MOSFET CJ2101-G RoHS Device V(BR)DSS -20V RDS(on.
ZPSEMI
CJ2101 - P-Channel MOSFET
CJ2101 SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel MOSFET FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life SOT-323.
Comchip
CJ2101-G - MOSFET
MOSFET CJ2101-G RoHS Device V(BR)DSS -20V RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V ID -1.4A Features - P-Channel MOSFET - Leading tren.
JCST
CJ2101 - MOSFETS
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel 8-V(D-S) MOSFET FEATURE Leading Trench Techno.