COOL Datasheet | Specifications & PDF Download

Ultra-Low Noise PNP Expitaxial Transistor 2SV888 1. Ultra Low-Noise Audio Amplifier Applications The 2SV888 is a PNP epitaxial transistor which has be

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IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS

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Hebei I.T. (Shanghai) Co., Ltd TEC1-12715 Datasheet 、 No. Items Symbol 1 Max. Operating Tem. T 2 Max. Cooling Power Qmax 3 Tem. Difference Max

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www.DataSheet4U.com Ultra-Low Noise Dual Operational Amplifier V4580 Dual Operational Amplifier 1. Description V4580 is a state-of-the-art dual op

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Double Side Cooled Module FF450R08A03P2 Final Data Sheet V3.0, 2020-05-11 Automotive High Power 1 Features / Description FF450R08A03P2 Double Si

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Ultra-Low Noise Dual Operational Amplifier www.DataSheet4U.com V4580 Dual Operational Amplifier 1. Description V4580 is a state-of-the-art dual oper

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Hebei I.T. (Shanghai) Co., Lt d. Specification Item Number: TEC1-12712 Device Outline See picture below Wire Criteria 1.18AWG UL, PVC insulated

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Thermoelectric Cooler Controller ADN8830 FEATURES High Efficiency Small Size: 5 mm ؋ 5 mm LFCSP Low Noise: <0.5% TEC Current Ripple Long-Term Temperat

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Data Sheet 8W 940nm Uncooled Multimode Laser Diode Module MU8-940-01/04 The Bookham new MU8-940-01/04 multimode laser diode module series has been de

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Ultra High Performance BGA Cooling Solutions w/ maxiGRIP™ Attachment ATS PART # ATS-50190B-C2-R0 Features & Benefits » maxiFLOW™ design features a low

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Ultra High Performance BGA Cooling Solutions w/ maxiGRIP™ Attachment ATS PART # ATS-50230B-C2-R0 Features & Benefits » maxiFLOW™ design features a low

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Ultra High Performance BGA Cooling Solutions w/ maxiGRIP™ Attachment ATS PART # ATS-50325P-C2-R0 Features & Benefits » maxiFLOW™ design features a low

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POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 01

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GS66516T Top-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Top-side cooled configuration • R

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GS66506T Top-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Top-side cooled configuration • R

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IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID2

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Advanced Technical Information IXKP 10N60C5M CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultr

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