.
Powerex Power Semiconductors
BCR16PM - Isolated Triac
BCR16PM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Isolated Triac 16 Amperes/400-600 Volts OUTLINE DRAWING .
Mitsubishi Electric
CR16AM - BCR16A
www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYP.
Renesas Technology
BCR16KM-12LB - Triac
BCR16KM-12LB Triac Medium Power Use REJ03G0327-0100 Rev.1.00 Aug.20.2004 Features • • • • • IT (RMS) : 16 A VDRM : 600 V IFGTI , IRGTI, IRGTⅢ : 30 mA.
CR Micro
CR16N65A8K - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CR16N65 A8K General Description： CR16N65 A8K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
Motorola
MCR16 - Silicon Controlled Rectifiers
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR16/D Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily f.
Renesas Technology
BCR16LM-12LB - Triac
BCR16LM-12LB Triac Medium Power Use Features • IT (RMS) : 16 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 30 mA • Viso : 1800 V Outline RENESAS Packa.
Renesas
BCR16CM-12LB - Triac
BCR16CM-12LB 600V - 16A - Triac Medium Power Use Preliminary Datasheet R07DS1032EJ0400 (Previous: REJ03G0457-0300) Rev.4.00 Feb 25, 2013 Features .
Renesas
BCR16PM-12L - Triac
BCR16PM-12L Triac Medium Power Use Features • IT (RMS) : 16 A • VDRM : 600 V • IFGTI, IRGTI, IRGTⅢ : 30 mA (20 mA)Note5 • Viso : 1500 V Outline TO-220.
Mitsubishi Electric Semiconductor
BCR16CM - TRIAC
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR16CM OUTLINE DRAWING 10.5 MAX Dimensions .
Powerex Power Semiconductors
BCR16CM - Triac
BCR16CM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Triac 16 Amperes/400-600 Volts OUTLINE DRAWING C D .
Mitsubishi Electric Semiconductor
BCR16PM - Triac
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR16PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions .
Renesas Technology
BCR16PM-12LG - Triac
BCR16PM-12LG Triac Medium Power Use Features IT (RMS) : 16 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA Viso : 2000V Outline RENESAS Package .
CR Micro
CR16N60FA9K - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CR16N60F A9K General Description： CR16N60F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
CR Micro
CR16N60A8K - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CR16N60 A8K General Description： CR16N60 A8K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
Siemens Semiconductor Group
BCR166 - PNP Silicon Digital Transistor
BCR 166 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) .
Renesas
BCR16CM-12LA - Triac
BCR16CM-12LA Triac Medium Power Use Features • IT (RMS) : 16 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline REJ03G0298-0300 R.
Renesas
BCR16CM-12LC - Triac
BCR16CM-12LC 600V - 12A - Triac Medium Power Use Features • IT (RMS) : 16 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III: 50 mA Data Sheet R07DS1031EJ0300.
GOOD-ARK
PCR160 - Peak Clamp Rectifiers
Features • Metal-Semiconductor junction with guard ring • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Protection o.
Renesas
BCR16FM-14LB - Triac
BCR16FM-14LB 700V - 16A - Triac Medium Power Use Features • IT (RMS) : 16 A • VDRM : 800 V (Tj=125C) • Tj: 150 °C • IFGTI, IRGTI, IRGT III:30 mA(20mA.
INCHANGE
BCR16FM-14LJ - Thyristor
isc Thyristors DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust d.
