CS19 Datasheet | Specifications & PDF Download

Current-Shunt Monitors, Voltage Output, Bidirectional, Zero-Drift, Low- or High-Side Current Sensing NCS199A1R, NCS199A2R, NCS199A3R The NCS199A1R, NC

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Current-Shunt Monitors, Voltage Output, Bidirectional, Zero-Drift, Low- or High-Side Current Sensing NCS199A1R, NCS199A2R, NCS199A3R The NCS199A1R, NC

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NCS199A1, NCS199A2, NCS199A3 Current-Shunt Monitor, Voltage Output, Bi-Directional Zero-Drift The NCS199A1, NCS199A2 and NCS199A3 are voltage output

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www.icdemi.com 12 LED -UCS1912 1. 2. ：UCS1912 12 LED ， ，，，。 ： z 40V z z 256 z z ， 10 z 800Kbps, 30 / 1024 ，15 2048 z IC ， z SOP16 ：SOP16

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CS 19 Phase Control Thyristors VRRM = 800-1200 V IT(RMS) = 29 A IT(AV)M = 19 A VRSM www.DataSheet4U.com VDSM V 800 1200 VRRM VDRM V 800 1200 Type

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NCS199A1, NCS199A2, NCS199A3 Current-Shunt Monitor, Voltage Output, Bi-Directional Zero-Drift The NCS199A1, NCS199A2 and NCS199A3 are voltage output

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a FEATURES Complete Baseband Processing Chipset Performs: Speech Coding/Decoding (GSM 06.XX) Channel Coding/Decoding (GSM 05.03) Equalization with 16-

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LMX2604 Triple-band VCO for GSM900/DCS1800/PCS1900 January 2004 LMX2604 Triple-band VCO for GSM900/DCS1800/PCS1900 General Description The LMX2604 i

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Silicon N-Channel Power MOSFET CS19N40 A8H ○R General Description： CS19N40 A8H the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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Advance Information This document contains information on a product under development. The parametric information contains target parameters that are

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Current-Shunt Monitors, Voltage Output, Bidirectional, Zero-Drift, Low- or High-Side Current Sensing NCS199A1R, NCS199A2R, NCS199A3R The NCS199A1R, NC

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CS 19 Phase Control Thyristors VRRM = 800-1200 V IT(RMS) = 29 A IT(AV)M = 19 A VRSM www.DataSheet4U.com VDSM V 800 1200 VRRM VDRM V 800 1200 Type

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NCS199A1, NCS199A2, NCS199A3 Current-Shunt Monitor, Voltage Output, Bi-Directional Zero-Drift The NCS199A1, NCS199A2 and NCS199A3 are voltage output

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Silicon N-Channel Power MOSFET CS19N40 AN ○R General Description： CS19N40 AN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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MITSUBISHI SEMICONDUCTOR BA01303 Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module Specification are subject to change w

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www.DataSheet4U.com TQ1422 (Advanced data sheet) GSM850/900 and DCS1800/PCS1900 Tx – Bandpass Filter Package Outline: Features: • • • • • • • • Low

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Silicon N-Channel Power MOSFET ○R CS19N40 ANR General Description： VDSS 400 V CS19N40 ANR, the silicon N-channel Enhanced ID 19 A VDMOSFETs,

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Silicon N-Channel Power MOSFET ○R CS19N10 A8 General Description： CS19N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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RMBA19500A May 2004 RMBA19500A PCS1900 2 Watt GaAs MMIC Power Amplifier General Description The RMBA19500A is a highly linear Power Amplifier. The t

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AP6682 Quad-band G850/G900/DCS1800/PCS1900 GPRS Front-end Module Datasheet VERSION 1.00 13-Mar-2013 This document is commercially confidential and mus

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