CT Micro CT1 Datasheet | Specifications & PDF Download

CT1010, CT1011, CT1012, CT1013, CT1014 CT1015, CT1016, CT1017, CT1018, CT1019 DC Input 4-Pin Long Mini-Flat Phototransistor Optocoupler Features • Hi

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CT1010, CT1011, CT1012, CT1013, CT1014 CT1015, CT1016, CT1017, CT1018, CT1019 DC Input 4-Pin Long Mini-Flat Phototransistor Optocoupler Features • Hi

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ZXCT1023 MICROPOWER FIXED GAIN OF 50 CURRENT MONITOR Description The ZXCT1023 is a precision high-side current sense monitor. Using this type of devi

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® 74VHCT138A 3 TO 8 LINE DECODER (INVERTING) PRELIMINARY DATA s s s s s s s s s s HIGH SPEED: tPD = 7.6 ns (TYP.) at VCC = 5V LOW POWER DISS

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M74HCT14 HEX SCHMITT INVERTER s s s s s s HIGH SPEED: tPD = 19ns (TYP.) at VCC = 4.5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOI

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SCT1000N170 Datasheet Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen

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® 74VHCT126A QUAD BUS BUFFERS (3-STATE) PRELIMINARY DATA s s s s s s s s s s HIGH SPEED: tPD = 5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION

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2CT15T45 A0 N 。 。 N 2CT15T45 A0 ○R ● ● ● ● ● VRRM IF（AV） VF(MAX) 45 25 0.55 V A V TO-263 -10℃～40℃ 1 ＜85％ 265℃ （Per Di

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ZXCT1107Q, ZXCT1109Q, ZXCT1110Q AUTOMOTIVE COMPLIANT MICROPOWER CURRENT MONITOR Description The ZXCT1107Q/09Q/10Q products are high-side unipolar cur

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M54HCT139 M74HCT139 DUAL 2 TO 4 DECODER/DEMULTIPLEXER . . . . . . . HIGH SPEED tPD = 17 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX

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M54/74HCT160/161 M54/74HCT162/163 SYNCHRONOUS PRESETTABLE 4-BIT COUNTER . . . . . . . HIGH SPEED fMAX = 50 MHz (TYP.) AT VCC = 5 V LOW POWER DISSIPA

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A Product Line of Diodes Incorporated ZXCT1009Q AUTOMOTIVE GRADE MICROPOWER CURRENT MONITOR Description The ZXCT1009Q is a micropower high side curre

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ZXCT1012 Reduced height micro-power current monitor Description The ZXCT1012 is a high side current sense monitor. Using this type of device eliminate

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M54HCT157/158 M74HCT157/158 HCT157 QUAD 2 CHANNEL MULTIPLEXER HCT158 QUAD 2 CHANNEL MULTIPLEXER (INV.) . HIGH SPEED tPD = 21 ns (TYP.) AT VCC = 5 V

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SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 500 mΩ typ., 12 A in an HiP247 package Features HiP247 3 2 1 D(2, TAB) • Very low RDS(o

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SCT1000N170AG Datasheet Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package Features Order code VDS RDS(on)

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SCT10N120AG Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Features HiP247 3 2 1 D(2

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® 74VHCT132A QUAD 2-INPUT SCHMITT NAND GATE PRELIMINARY DATA s s s s s s s s s s HIGH SPEED: tPD = 6.5 ns (TYP.) at VCC = 5V LOW POWER DISSIP

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® 74VHCT139A DUAL 2 TO 4 DECODER/DEMULTIPLEXER PRELIMINARY DATA s s s s s s s s s HIGH SPEED: tPD = 7.2 ns (TYP.) at VCC = 5V LOW POWER DISS

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