CT60AM-18F Datasheet | Specifications & PDF Download

CT60AM-18F Insulated Gate Bipolar Transistor Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package co

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MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 φ3.2 6 1 2 1 Œ  Ž

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