MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIP.
Powerex Power Semiconductors
CT60AM-18F - INSULATED GATE BIPOLAR TRANSISTOR
MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 φ3.2 6 1 2 1 .
Renesas
CT60AM-18F - Insulated Gate Bipolar Transistor
CT60AM-18F Insulated Gate Bipolar Transistor Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package co.