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IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS

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FDMC8010DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET August 2016 FDMC8010DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30 V, 157 A, 1.28 mΩ F

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IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID2

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www.DataSheet4U.com Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSF

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FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET July 2015 FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30 V, 40 A, 2.2 mΩ Featur

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FDMC3020DC N-Channel Dual CoolTM PowerTrench® MOSFET FDMC3020DC N-Channel Dual CoolTM PowerTrench® MOSFET 30 V, 40 A, 6.25 mΩ July 2012 Features G

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FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V, 40 A, 3.5 mΩ October 2010 F

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POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 01

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POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 01

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IXKP 13N60C5M CoolMOS™ 1) Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Prelimina

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Advanced Technical Information IXKP 10N60C5M CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultr

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SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 •

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Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic a

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Final data SPW47N60S5 VDS RDS(on) ID 600 0.07 47 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide

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Final data SPW47N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 Product Sum

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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