D02-65 Datasheet | Specifications & PDF Download

SC65D02C40 8-BIT MCU FOR REMOTE CONTROLLER(40K ROM) DESCRIPTION SC65D02C40 is a multifunction infrared remote controller integrating many electrical

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C3D02065E Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 650-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero

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SC65D02C40 8-BIT MCU FOR REMOTE CONTROLLER(40K ROM) DESCRIPTION SC65D02C40 is a multifunction infrared remote controller integrating many electrical

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SC65D02C40 8-BIT MCU FOR REMOTE CONTROLLER(40K ROM) DESCRIPTION SC65D02C40 is a multifunction infrared remote controller integrating many electrical

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CJD02N65 TO-251-3L Plastic-Encapsulate MOSFETS CJD02N65 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N65 V(BR)DSS 650 N-Channel Power MOSFET RDS(on)MAX ID

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SC65D02C40 8-BIT MCU FOR REMOTE CONTROLLER(40K ROM) DESCRIPTION SC65D02C40 is a multifunction infrared remote controller integrating many electrical

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C3D02065E 650 V, 2 A Silicon Carbide Schottky Diode Features • 650-Volt Schottky rectifier • Optimized for PFC boost diode application • Zero reverse

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WNSC6D02650P Silicon Carbide Diode Rev.01 - 23 February 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD123 pl

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www.DataSheet.co.kr LB065WQ3 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL ( ) Preliminary Specification ( ● ) Final S

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D SE 0 RI 2 ES www.franmar.com.tw 2 Watts SIP Type DC - DC Converter ◆ 1500/3000VDC Isolation ◆ 2W Unregulated Output Power ◆ No Heatsink Require

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CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dens

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CED02N65D/CEU02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dens

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WNSC6D02650D-A Silicon Carbide Diode Rev.01 - 7 February 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (D

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T650HVD02.0 Product Specification Rev.1 0 Model Name: T650HVD02.0 Issue Date : 2013/02/21 () Preliminary Specifications (＊)Final Specifications Custo

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CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. Super high dense cell design f

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WNSC6D02650D Silicon Carbide Diode Rev.01 - 14 April 2023 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (DPAK)

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