D1221 Datasheet | Specifications & PDF Download

SMD Type Transistors NPN Transistors 2SD1221 ■ Features ● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) ● High

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TetraFET D1221UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C 1 2 4 A 3 B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W

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TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm • Low collector sa

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KSD1221 KSD1221 Low Frequency Power Amplifier • Low Collector-Emitter Saturation Voltage • Complement to KSB906 1 I-PACK 1. Base 2. Collector 3. E

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TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm • Low collector sa

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DC/DC Converter TED Series Features Full SMD design with Ceramic Capacitors Wide 2:1 Input range High Efficiency Short Circuit Protection Dual Output

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