D1300 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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STD13007 NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed switching • High Collector Voltage : VCBO = 700V • Suit

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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www.DataSheet4U.com R 3DD13007K µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D13007K ²úÆ·ÌØÐÔ ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ Ö÷ÒªÓÃ; ¸ßƵ¿ª¹ØçÔ´ ½ÚÄܵÆç×ÓÕòÁ÷ ¸ßÆ

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13007MD IC VCEO PC(TO-262/220C) MAIN CHARACTERISTICS 8A 400V 80W Package z z z z z

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( DataSheet : www.DataSheet4U.com ) NPN ■■ ：、。 D13009 C B E ■■ （Ta=25℃） - - - ■■（Ta=25℃） - - - - - - - ■■ HFE(1) （Tc=25

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13005MD IC VCEO PC(TO-220HF) PC(TO-220) MAIN CHARACTERISTICS 4A 400V 35W 75W Package

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www.DataSheet4U.com NPN ■■ ：、。 D13005 C B E ■■ （Ta=25℃） - - - 　　 ■■（Ta=25℃） - - - - - - - ■■ HFE(1) 　　 （Tc=25℃） （Ta=25℃）

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3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 — power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ u

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PHD13003C NPN power transistor with integrated diode Rev.02 - 29 May 2018 Product data sheet 1. General description High voltage, high speed, planar

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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PHD13005 NPN power transistor with integrated diode Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High vol

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat)

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KSX13005A Series KSB13005A/KSG13005A/KSU13005A KSD13005A/KSH13005A/KSH13005AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A General D

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Elektronische Bauelemente BD13003B 1.5A, 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f

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PHD13003C NPN power transistor with integrated diode Rev. 01 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High vo

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SMD Power Transistor (NPN) MJD13003 SMD Power Transistor (NPN) Features  Designed for high voltage, high speed power switching inductive circuits ap

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