D1300 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 FEATURES  PC=350mW(Mounted on ceramic substrate). Pb  High sp

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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www.DataSheet4U.com NPN ■■ ：、。 D13005 C B E ■■ （Ta=25℃） - - - 　　 ■■（Ta=25℃） - - - - - - - ■■ HFE(1) 　　 （Tc=25℃） （Ta=25℃）

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NPN ○R 3DD13005A1 1 ： 3DD13005A1 NPN ，， ，、 VCEO 。 ：TO-92， RoHS 。 IC Ptot （Tc=25℃） 2 ： TO-92 400 3 2.8 V A W ● 、 ● ● ● ● 3 ： 、、 ，。

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File No. 784 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ mlm5LJTI Solid State Division Rectifiers D1300 Series R II I' I' ANODE

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File No. 784 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ mlm5LJTI Solid State Division Rectifiers D1300 Series R II I' I' ANODE

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File No. 784 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ mlm5LJTI Solid State Division Rectifiers D1300 Series R II I' I' ANODE

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File No. 784 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ mlm5LJTI Solid State Division Rectifiers D1300 Series R II I' I' ANODE

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SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided in

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Production specification High Voltage Fast Switching NPN Power Transistor 3DD13002 FEATURES  High speed switching.  Small flat package. Pb Lead-f

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WBD13003D High Voltage Fast-Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA ■ B

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002N46 TRANSISTOR（NPN） TO-92 FEATURE 3ower 6witching

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002S TRANSISTOR (NPN) TO-92 FEATURES Power switching

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 3DD13003F TRANSISTOR ( NPN ) TO-220F FEATURE Power Swit

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003N3 TRANSISTOR (NPN) TO-126 FEATURES z Power switc

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