D145 Datasheet | Specifications & PDF Download

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www.DataSheet4U.com PD1450-35T52 InGaAs PIN-PD Outer dimension(Unit:mm) PD1450-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a

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P60D145_SDS SmartMX2 Family P60D145y Rev. 3.0 — 27 September 2016 Public product data sheet COMPANY PUBLIC 1 General description The P60D145 dual in

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1454 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High vol

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Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 3

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19.20 20.32 Max 14 8 1 1.30 7 2.39 Max 6.30 7.40 Max Unit: mm 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 + – 0.10 0.05 0°

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-t

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD145 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(B

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Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.

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IGBT (NPT) Module Boost Chopper + free wheeling Diode Part number MID145-12A3 MID145-12A3 VCES I C25 VCE(sat) = = = 1200 V 160 A 2.2 V 4 5 Featur

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A www.datasheet4u.com DESCRIPTION ·With TO-3PFa package

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19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hit

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A www.datasheet4u.com DESCRIPTION ·With TO-3PFa package

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1459 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·High all

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Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q Parameter Co

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Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 3

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1452 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High vol

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SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS IMD −55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING H

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19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hit

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19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hit

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