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BD145 - NPN Transistor

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Part number BD145
Manufacturer INCHANGE
File Size 175.07 KB
Description NPN Transistor
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Description

Excellent Safe Operating Area Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 3A Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation.APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter

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