BD140G Datasheet, Transistors, ON Semiconductor

BD140G Features

• Transistors
• High DC Current Gain
• BD 136, 138, 140 are complementary with BD 135, 137, 139
• These Devices are Pb
• Free, Halogen Free/BFR Free and are RoHS Complia

PDF File Details

Part number:

BD140G

Manufacturer:

ON Semiconductor ↗

File Size:

171.74kb

Download:

📄 Datasheet

Description:

Plastic medium-power silicon pnp transistors.

TAGS

BD140G

ON Semiconductor

📁 Related Datasheet

BD140 - Transistor (STMicroelectronics)
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos.

BD140 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
BD136 / BD138 / BD140 — PNP Epitaxial Silicon Transistor March 2015 BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor Features • Complement to.

BD140 - Plastic Medium Power Silicon PNP Transistor (ON Semiconductor)
PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−F.

BD140 - Silicon PNP Transistor (Toshiba)
BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1.

BD140 - PNP SILICON TRANSISTOR (UTC)
UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION The UTC BD136/BD138/BD140 are s.

BD140 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD140 DESCRIPTION ·DC Current Gain- : hFE= 63(Min)@ IC= -0.15A ·Collector-Emitter Sustaining.

BD140 - SILICON PNP Transistor (Toshiba)
BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1.

BD140-10 - Plastic Medium Power Silicon PNP Transistor (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD136/D Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio am.

BD14000EFV-C - Cell Balance LSI of 4 to 6 Series Power Storage Element Cells (Rohm)
Datasheet Simple design with built-in self-controlled cell balance features circuit Cell Balance LSI of 4 to 6 Series Power Storage Element Cells for.

BD141 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD141 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(B.