BD141 - NPN Transistor
*Excellent Safe Operating Area *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 4A *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIO
