D2210 Datasheet | Specifications & PDF Download

CD22103A Data Sheet January 1997 File Number 1310.3 CMOS HDB3 (High Density Bipolar 3) Transcoder for 2.048/8.448Mb/s Transmission Applications The C

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AOD2210-VB AOD2210-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.055 at VGS = 10 V ID (A) 3

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D2210-VB D2210-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.055 at VGS = 10 V ID (A) 30 D

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Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibilityisassumedbyAnal

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a FEATURES 200°C Temperature Span Accuracy Better than ± 2% of Full Scale Linearity Better than ± 1% of Full Scale Temperature Coefficient of 22.5 mV/

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Data Sheet FEATURES Ultralow noise, low power current amplifier 80 fA/√Hz (typical) noise floor 140 μA (typical) of supply current when active (EE = 0

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Semiconductor CD22101, CD22102 x 4 x 2 Crosspoint Switch with Control Memory CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of c

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Data Sheet Low Voltage, Resistor-Programmable, Thermostatic Switch AD22105 02099-001 FEATURES User-programmable temperature setpoint ±2.0°C maximum

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TetraFET D2210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C 2 1 A 3 F (2 pls) H J N (typ) B D (2 pls) MI PIN 1 PIN 3 SOURCE GATE

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Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.6±0.2 1

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AOD2210/AOI2210 200V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-sw

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Semiconductor CD22101, CD22102 x 4 x 2 Crosspoint Switch with Control Memory CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of c

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T UCT ROD ACEMEN 47 P E Semiconductor 7 T L 7 E P 42 OL RE 00-4 m OBS ENDED 8 1 s.co MM ions ECO pplicat p@harri R O A N ral ntap Cent : ce Call or em

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