Transistors 2SD261 .
Alpha & Omega Semiconductors
14
AOD2610 - N-Channel MOSFET
AOD2610 60V N-Channel MOSFET General Description The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient h.
Samsung
13
K4D261638K-LC50 - 128Mbit GDDR SDRAM
K4D261638K 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.3 July 2007 Notice INFORMAT.
Fairchild Semiconductor
9
FDD2612 - 200V N-Channel PowerTrench MOSFET
FDD2612 August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t.
JCET
9
D2611 - NPN Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D 2611 TRANSISTOR (NPN) FEATURE power switching application.
VBsemi
8
AOD2610 - N-Channel MOSFET
AOD2610 AOD2610 Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.010 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 58.
Analog Devices
7
AD261 - High Speed/ Logic Isolator
a FEATURES Isolation Test Voltage: To 3.5 kV rms Five Isolated Logic Lines: Available in Six I/O Configurations Logic Signal Bandwidth: 20 MHz (min) C.
INCHANGE
7
AOD2610E - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOD2610E FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Res.
Brinkmann Pumpen
6
BD2610 - Originalbetriebsanleitung
BD2610 Originalbetriebsanleitung BRINKMANN-Tauchpumpen STA/SAL401…609 Brinkmann Pumpen K. H. Brinkmann GmbH & Co. KG Friedrichstraße 2 D-58791 Werdo.
Samsung
4
K4D261638 - 128Mbit GDDR SDRAM
K4D261638F 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.2 January 2004 Samsung Ele.
Siemens Group
4
LD261 - GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 0.6 0 ... 5 0.4 A A Radiant.
RICOH
3
R1163D261B - 3-MODE 150mA LDO REGULATOR
R1163x SERIES 3-MODE 150mA LDO REGULATOR with the Reverse Current Protection NO.EA-118-0605 OUTLINE The R1163x Series consist of CMOS-based voltage re.
Samsung
3
K4D261638F - 128Mbit GDDR SDRAM
K4D261638F 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.2 January 2004 Samsung Ele.
Wuxi Youda electronics
3
YD2611 - TV SOUND POWER AMPLIFIER
www.DataSheet4U.com YOUDA INTEGRATED CIRCUIT YD2611 TV SOUND POWER AMPLIFIER—YD2611 DESCRIPTION The YD2611 is a monolithic integrated circuit desig.
RICOH
3
R1131D261B - LDO REGULATOR
R1131x SERIES Low Voltage 300mA LDO REGULATOR NO.EA-116-061102 OUTLINE The R1131x Series are CMOS-based low voltage regulator ICs with output voltage.
Samsung
3
K4D261638K - 128Mbit GDDR SDRAM
K4D261638K 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.3 July 2007 Notice INFORMA.
