D261 Datasheet | Specifications & PDF Download

AOD2610 60V N-Channel MOSFET General Description The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient h

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Transistors 2SD261

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www.DataSheet4U.com CD 261 LK Series 10 000 - 12 000h at 105°C · High Reliability at High Voltage · Power Supplies · Electronic Lighting Ballast · Ge

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isc N-Channel MOSFET Transistor AOD2610E FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Res

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BD2610 Originalbetriebsanleitung BRINKMANN-Tauchpumpen STA/SAL401…609 Brinkmann Pumpen K. H. Brinkmann GmbH & Co. KG Friedrichstraße 2 D-58791 Werdo

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K4D261638K 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.3 July 2007 Notice INFORMAT

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 0.6 0 5 0.4 A A Radiant

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a FEATURES Isolation Test Voltage: To 3.5 kV rms Five Isolated Logic Lines: Available in Six I/O Configurations Logic Signal Bandwidth: 20 MHz (min) C

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FLLD261 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD . . . .350 mW @ TA = 25 Deg C BV . . . .200 V (MIN) @ IR = 5 uA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPER

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R1163x SERIES 3-MODE 150mA LDO REGULATOR with the Reverse Current Protection NO.EA-118-0605 OUTLINE The R1163x Series consist of CMOS-based voltage re

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AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low E

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SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR ISSUE 2 – SEPTEMBER 1995 7 FLLD261 2 DIODE PIN CONNECTION 1 3 3 1 2 SOT23 PART MARKING DETAIL

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FDD2612 August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t

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Transistors Power Transistor (120V, 6A) 2SD2615 2SD2615 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between ba

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K4D261638F 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.2 January 2004 Samsung Ele

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R1131x SERIES Low Voltage 300mA LDO REGULATOR NO.EA-116-061102 OUTLINE The R1131x Series are CMOS-based low voltage regulator ICs with output voltage

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Transistors 2SD261

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