D261 Datasheet | Specifications & PDF Download

Transistors 2SD261

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20V N-Channel MOSFETs PDD2612A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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AOD2610 60V N-Channel MOSFET General Description The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient h

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Transistors Power Transistor (120V, 6A) 2SD2615 2SD2615 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between ba

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Transistors 2SD261

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KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector (1.

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BD2610 Originalbetriebsanleitung BRINKMANN-Tauchpumpen STA/SAL401…609 Brinkmann Pumpen K. H. Brinkmann GmbH & Co. KG Friedrichstraße 2 D-58791 Werdo

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KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector (1.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D 2611 TRANSISTOR (NPN) FEATURE power switching application

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N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module ND261N ND261N ElektKriesnchnedaEtigeennschaften / Electrical properties Elekt

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a FEATURES Isolation Test Voltage: To 3.5 kV rms Five Isolated Logic Lines: Available in Six I/O Configurations Logic Signal Bandwidth: 20 MHz (min) C

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AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low E

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K4D261638F 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.2 January 2004 Samsung Ele

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»ª¾§Ë«¼«µç· CD2611CS 5W ÒôƵ¹¦ÂÊ·Å´óµç· 1. ¸ÅÊöÓëÌصã CD2611CS ÊÇÒ»¿é 5W ÒôƵ¹¦ÂÊ·Å´óµç· Ö÷ÒªÓÃÓÚµçÊÓ»úºÍÒôÏìÉ豸 ¿ÉÓë·ÆÀûÆÖ¹«Ë¾ TDA2611A »¥»»Ê¹Ó

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Netz-Dioden-Modul Rectifier Diode Module Datenblatt / Data sheet DD261N Key Parameters VDRM / VRRM ITAVM ITSM VT0 rT RthJC Base plate 2200 V 260 A

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K4D261638K 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.3 July 2007 Notice INFORMAT

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isc N-Channel MOSFET Transistor AOD2610E FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Res

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