D418 Datasheet | Specifications & PDF Download

AOD4184A 40V N-Channel MOSFET General Description Product Summary The AOD4184A combines advanced trench MOSFET technology with a low resistance pac

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AOD4186 40V N-Channel MOSFET General Description The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extr

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AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4189 uses advanced trench technology and design to provide excel

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AOD4186-VB AOD4186-VB Datasheet N-Channel 4 0-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.012 at VGS = 10 V 0.014 at V

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Isc N-Channel MOSFET Transistor AOD4184A ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100

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AOD4185/AOI4185 40V P-Channel MOSFET General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gat

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D4189-VB D4189-VB Datasheet P-Channel 4 0 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.

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AOD4182 80V N-Channel MOSFET TM SDMOS General Description The AOD4182 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) wi

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AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide

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isc P-Channel MOSFET Transistor AOD4189 FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS=-40V(Min) ·Static Drain-Source On-Re

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GO TO TABLE OF CONTENTS D4 Series Features s 8 current ratings s Choice of actuators s Various terminal types s 3 contact arrangements s Choice of st

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AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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isc N-Channel MOSFET Transistor AOD4184 ·FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor AOD4180 FEATURES ·Drain Current –ID= 54A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resi

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IN-PHASE 4-WAY DIVIDERS/COMBINERS, POWER SMA/TYPE N 0.5-18 GHz GENERAL SPECIFICATIONS Frequency Range: RF Impedance: RF Power: 0.5 to 18.0 GHz 50 Ohm

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V AC U U M S C H M E L ZE DATENBLATT / Specification Sach Nr.: Item no.: K-Nr.: 18281 K-no.: Zündübertrager / Trigger Transformer Kunde: Typenele

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isc N-Channel MOSFET Transistor AOD418 ·FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Res

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isc P-Channel MOSFET Transistor AOD4185 FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS= -40V(Min) ·Static Drain-Source On-R

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AOD4185 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configura

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Freescale AOD4184/ MCD4184 N-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

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