D418 Datasheet | Specifications & PDF Download

AOD4185/AOI4185 40V P-Channel MOSFET General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gat

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MOSFET – Power, Single, P-Channel, Schottky Diode, Schottky Barrier Diode -30 V, -4.0 A, 20 V, 2.2 A NTMD4184PF Features  FETKYt Surface Mount Pack

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AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide

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Freescale AOD4184/ MCD4184 N-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

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AOD4184A 40V N-Channel MOSFET General Description Product Summary The AOD4184A combines advanced trench MOSFET technology with a low resistance pac

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AOD4186 40V N-Channel MOSFET General Description The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extr

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Snap-In Aluminum Electrolytic Capacitors PEH536 Series, +105ºC Overview Applications Typical applications for KEMET's PEH536 capacitor include switc

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AOD4180 80V N-Channel MOSFET TM SDMOS General Description The AOD4180 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) wi

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AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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isc N-Channel MOSFET Transistor AOD4184 ·FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor AOD418 ·FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Res

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isc P-Channel MOSFET Transistor AOD4189 FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS=-40V(Min) ·Static Drain-Source On-Re

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AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4189 uses advanced trench technology and design to provide excel

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AOD4187 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4187 uses advanced trench technology and design to p

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AOD4184 AOD4184 Datasheet N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0050 at VGS = 10 V 40 0.0065 at VGS = 4.5 V ID (A)a

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AOD4185 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configura

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AOD4182 80V N-Channel MOSFET TM SDMOS General Description The AOD4182 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) wi

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isc N-Channel MOSFET Transistor AOD4182 FEATURES ·Drain Current –ID= 53A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resi

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D4189-VB D4189-VB Datasheet P-Channel 4 0 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.

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Isc N-Channel MOSFET Transistor AOD4184A ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100

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