www.DataSheet.co.kr INCHANGE Semiconductor isc P.
Inchange Semiconductor
D5011 - 2SD5011
www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage.
JILIN SINO-MICROELECTRONICS
3DD5011 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0..
Telemecanique
LC1-D5011xx - Contactors
Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48.
Telemecanique
LC1-D5011xx - Contactors
Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48.
Inchange Semiconductor
2SD5011 - Power Transistor
isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5011 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Hig.
Telemecanique
LC2-D5011xx - Contactors
Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48.
Huajing Microelectronics
3DD5011A9 - Silicon NPN Bipolar Transistor
Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011A9 1 Description： 3DD5011A9, silicon NPN low fr.
Huajing Microelectronics
3DD5011AH - Silicon NPN Bipolar Transistor
Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011AH 1 Description： 3DD5011AH, silicon NPN low fr.
Analog Devices
AD5011 - 2 Pair/1 Pair ETSI Compatible HDSL Analog Front End
PRELIMINARY TECHNICAL DATA a Preliminary Technical Data FEATURES Integrated front End for Single Pair or Two Pair HDSL Systems Meets ETSI Specificati.
Inchange Semiconductor
KSD5011 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5011 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·.
Token
TPUD5011 - Low-Profile Wirewound Power Inductors
Product Introduction SMD unshielded wire-wound power inductors compact low profile to 0.8 mm. Features : Open Magnetic circuit construction. Low.
Telemecanique
LP1-D5011xx - Contactors
Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48.
Seme LAB
D5011UK - METAL GATE RF SILICON FET
TetraFET D5011UK METAL GATE RF SILICON FET MECHANICAL DATA A 8 D 7 6 5 1 2 CB 3 4 GOLD METALLISED N MULTI-PURPOSE SILICON DMOS RF FET P 10W .
Telemecanique
LP1-D5011xx - Contactors
Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48.
