D5011 Datasheet | Specifications & PDF Download

CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0.

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isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5011 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Hig

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage

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Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48

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Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011A9 1 Description： 3DD5011A9, silicon NPN low fr

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PRELIMINARY TECHNICAL DATA a Preliminary Technical Data FEATURES Integrated front End for Single Pair or Two Pair HDSL Systems Meets ETSI Specificati

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Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5011 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·

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Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48

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Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48

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Contactors d 3-pole contactors for motor control, 9 to 95 A Utilisation category AC-3 Control circuit : a.c. Dimensions, mounting : pages 1/44 to 1/48

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TetraFET D5011UK METAL GATE RF SILICON FET MECHANICAL DATA A 8 D 7 6 5 1 2 CB 3 4 GOLD METALLISED N MULTI-PURPOSE SILICON DMOS RF FET P 10W

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Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011AH 1 Description： 3DD5011AH, silicon NPN low fr

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 Product Introduction SMD unshielded wire-wound power inductors compact low profile to 0.8 mm. Features :  Open Magnetic circuit construction.  Low

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