D600 Datasheet | Specifications & PDF Download

·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION: Low Frequency Power Amplifier Applications. ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter

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() Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency • Much lower FOM for fast switching efficiency

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www.DataSheet4U.com ® VND600 DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY TYPE VND600 s s RDS(on) 35mΩ Ilim 25A VCC 36 V DC SHORT CIRCUIT CURRENT

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AOD600A70R/AOI600A70R 700V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switc

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FD600 FICHE TECHNIQUE RELAIS HERMETIQUE 3 RT DOUBLE COUPURE 10 A/56 Vcc Relais hermétique monostable polarisé 3R(DC) + 3T(DE) Combinaison des contacts

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UD6001 P-Ch 60V Fast Switching MOSFETs General Description The UD6001 is the highest performance trench P-ch MOSFETs with extreme high cell density ,

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good

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Silicon N-Channel Power MOSFET HPD600R700DN ○R General Description： HPD600R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C

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Technische Information / Technical Information IGBT-Module IGBT-modules FD600R12IP4D PrimePACK™2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter

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Technische Information / technical information IGBT-Module IGBT-modules FD600R17KE3_B2 Vorläufige Daten / preliminary data /012 60 789 60 60?@ =C8C /

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600V, 20A ULTRAFAST DUAL RECTIFIERS SF20D600D2 Ultrafast Recovery Rectifier Features  Low forward voltage drop and leakage current  Ultrafast rev

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PolySwitch® Resettable PTCs Surface Mount > LoRho Series Low Rho SMD Series Agency Approvals AGENCY AGENCY FILE NUMBER 078165 * E74889 * R 72161796

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FEATURES 2 channels with independent gain control Linear in dB gain response 2 gain ranges AD600: 0 dB to 40 dB AD602: –10 dB to +30 dB Accurate absol

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www.DataSheet4U.com ® VND600 DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY TYPE VND600 s s RDS(on) 35mΩ Ilim 25A VCC 36 V DC SHORT CIRCUIT CURRENT

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SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A.

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C

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Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applic

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IPD600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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