Ordering number:346G PNP/NPN Epitaxial Planar Sil.
KEC
KTD600K - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A. .
SavantIC
2SD600 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C.
Fgx
D600K - NPN Silicon Transistor
·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION: Low Frequency Power Amplifier Applications. ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter.
AUK
SF20D600D2 - 20A ULTRAFAST DUAL RECTIFIERS
600V, 20A ULTRAFAST DUAL RECTIFIERS SF20D600D2 Ultrafast Recovery Rectifier Features Low forward voltage drop and leakage current Ultrafast rev.
ON Semiconductor
2SD600 - PNP / NPN Epitaxial Planar Silicon Transistors
Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applic.
SavantIC
2SD600K - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C.
APC
SURTD6000RMXLP - Smart-UPS RT Uninterruptible Power Supply User Manual
User Manual Smart-UPS™RT Uninterruptible Power Supply SURTD5000RMXLP SURTD6000RMXLP 120/208/240 Vac SURTD6000RMXLJP 100/200 Vac Rack Mount 3U/Tower S.
Fairchild Semiconductor
FCD600N60Z - N-Channel SuperFET II MOSFET
FCD600N60Z — N-Channel SuperFET® II MOSFET FCD600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ November 2013 Features • 650 V @ TJ = 150°.
STMicroelectronics
VND600SP - DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
www.DataSheet4U.com ® VND600 DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY TYPE VND600 s s RDS(on) 35mΩ Ilim 25A VCC 36 V DC SHORT CIRCUIT CURRENT.
CR Micro
HPD600R380PC-G - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R HPD600R380PC-G General Description： HPD600R380PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su.
CR Micro
HPD600R280PC-G - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R HPD600R280PC-G General Description： HPD600R280PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su.
CR Micro
CRJD600N70G2 - SJMOS N-MOSFET
() Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency • Much lower FOM for fast switching efficiency .
Will Semiconductor
WNMD6003 - Dual N-Channel MOSFET
WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNMD6.
Central Semiconductor Corp
CMXD6001 - SUPERmini. TRIPLE ISOLATED SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE
CMXD6001 SUPERmini™ TRIPLE ISOLATED SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTO.
UNIKC
PD600BA - N-Channel MOSFET
PD600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.5mΩ @VGS = 10V ID 42A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25.
