D633 Datasheet | Specifications & PDF Download

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CD6309 - CD6349 0.5 W Zener Diode Chips Features • Low reverse Leakage Characteristics • Low Noise Characteristics • All Junctions Completely Protect

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Data Sheet FEATURES 4-quadrant multiplication Low cost, 8-lead SOIC and PDIP packages Complete—no external components required Laser-trimmed accuracy

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CD6309 - CD6349 0.5 W Zener Diode Chips Features • Low reverse Leakage Characteristics • Low Noise Characteristics • All Junctions Completely Protect

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CD6309 - CD6349 0.5 W Zener Diode Chips Features • Low reverse Leakage Characteristics • Low Noise Characteristics • All Junctions Completely Protect

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CD6309 - CD6349 0.5 W Zener Diode Chips Features • Low reverse Leakage Characteristics • Low Noise Characteristics • All Junctions Completely Protect

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD633 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Satura

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·C

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Enhanced Product FEATURES 4-quadrant multiplication Low cost, 8-lead SOIC package Complete—no external components required Laser-trimmed accuracy and

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CD6309 - CD6349 0.5 W Zener Diode Chips Features • Low reverse Leakage Characteristics • Low Noise Characteristics • All Junctions Completely Protect

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CD6309 - CD6349 0.5 W Zener Diode Chips Features • Low reverse Leakage Characteristics • Low Noise Characteristics • All Junctions Completely Protect

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HD63310---------------- 5- DPRAM (Smart Dual Port RAM) The HD63310 (S-DPRAM) is a high intelligent DPRAM, which provide a communication path between

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DATA SHEET MOS INTEGRATED CIRCUIT µPD6325, µPD6326, µPD6335, µPD6336 QUAD/OCTAL 6BIT D/A CONVERTER CMOS LSI DESCRIPTION µPD6325 Serise are 6 bit D/

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·C

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CED6336/CEU6336 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 25A , RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS =

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