INCHANGE Semiconductor isc Product Specification .
SavantIC
BD649 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type.
Inchange Semiconductor
D649 - 2SD649
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·H.
Microsemi
CD649 - GENERAL PURPOSE SILICONE DIODE
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com TECHNICAL DATA SHEET Gort R.
Inchange Semiconductor
2SD649 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·H.
Elpida Memory
HB52RD649DC-B - 512MB Unbuffered SDRAM S.O.DIMM
DATA SHEET 512MB Unbuffered SDRAM S.O.DIMM HB52RF649DC-B (64M words × 72 bits, 2 bank) HB52RD649DC-B (64M words × 72 bits, 2 bank) Description The HB.
Hitachi Semiconductor
HD64941 - Asynchronous Communications Interface
HD64941---------------- ACI (Asynchronous Communications Interface) The HD64941 (ACI) is a universal asynchronous data communications controller chip.
Bourns Electronic Solutions
BD649 - NPN SILICON POWER DARLINGTONS
www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD.
Comset Semiconductors
BD649 - SILICON DARLINGTON POWER TRANSISTORS
SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit a.
ON Semiconductor
NVD6495NL - N-Channel Power MOSFET
MOSFET – Power, N-Channel, Logic Level 100 V, 25 A, 50 mW NVD6495NL Features • Low RDS(on) • 100% Avalanche Tested • AEC−Q101 Qualified • These Devi.
Panasonic
MA3D649 - Fast Recovery Diode
Fast Recovery Diodes (FRD) MA3D649 (MA6D49) Silicon planar type (cathode common) For high-frequency rectification 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 .
SSDI
SPD649-1 - STANDARD RECOVERY RECTIFIER
www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power..
SSDI
SPD649-1SMS - STANDARD RECOVERY RECTIFIER
www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power..
INCHANGE
BD649F - NPN Transistor
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD649F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to T.
INCHANGE
BD649 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(.