D649 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·H

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HD64941---------------- ACI (Asynchronous Communications Interface) The HD64941 (ACI) is a universal asynchronous data communications controller chip

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD649F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to T

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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com TECHNICAL DATA SHEET Gort R

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(

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www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·H

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DATA SHEET 512MB Unbuffered SDRAM S.O.DIMM HB52RF649DC-B (64M words × 72 bits, 2 bank) HB52RD649DC-B (64M words × 72 bits, 2 bank) Description The HB

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www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.

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SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit a

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MOSFET – Power, N-Channel, Logic Level 100 V, 25 A, 50 mW NVD6495NL Features • Low RDS(on) • 100% Avalanche Tested • AEC−Q101 Qualified • These Devi

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www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.

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Fast Recovery Diodes (FRD) MA3D649 (MA6D49) Silicon planar type (cathode common) For high-frequency rectification 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2

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